Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.
Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.
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Items |
Production |
Research |
Dummy |
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Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
99.5 - 100mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
32.5±1.5mm |
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Secondary flat position |
90° CW from primary flat ±5°. silicon face up |
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Secondary flat length |
18±1.5mm |
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TTV |
≤5 μm |
≤10 μm |
≤20 μm |
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LTV |
≤2 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
NA |
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Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Warp |
≤20 μm |
≤45 μm |
≤50 μm |
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Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
≤1 ea/cm2 |
≤5 ea/cm2 |
≤10 ea/cm2 |
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Metal impurities |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
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Scratches |
≤2ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
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Edge chips/indents/fracture/hex plates |
None |
NA |
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Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
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Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
The inner bag is filled with nitrogen and the outer bag is vacuumed. Multi-wafer cassette, epi-ready. |
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*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD. |
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