CVD SiC&TaC Coating

Silicon carbide(SiC) epitaxy

The epitaxial tray, which holds the SiC substrate for growing the SiC epitaxial slice, placed in the reaction chamber and directly contacts the wafer.

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The upper half-moon part is a carrier for other accessories of the reaction chamber of Sic epitaxy equipment,while the lower half-moon part is connected to the quartz tube, introducing the gas to drive the susceptor base to rotate. they are  temperature-controllable and installed in the reaction chamber without direct contact with the wafer.


Si epitaxy


The tray, which holds the Si substrate for growing the Si epitaxial slice, placed in the reaction chamber and directly contacts the wafer.


The preheating ring is located on the outer ring of the Si epitaxial substrate tray and is used for calibration and heating. It is placed in the reaction chamber and does not directly contact the wafer.


An epitaxial susceptor, which holds the Si substrate for growing an Si epitaxial slice, placed in the reaction chamber and directly contacts the wafer.

Barrel Susceptor for Liquid Phase Epitaxy(1)

Epitaxial barrel is key components used in various semiconductor manufacturing processes, generally used in MOCVD equipment, with excellent thermal stability, chemical resistance and wear resistance, very suitable for use in high temperature processes. It contacts the wafers.


Physical properties of Recrystallized Silicon Carbide

Property  Typical Value
Working temperature (°C) 1600°C (with oxygen), 1700°C (reducing environment)
SiC content > 99.96%
Free Si content <0.1%
Bulk density 2.60-2.70 g/cm 3
Apparent porosity < 16%
Compression strength > 600 MPa
Cold bending strength 80-90 MPa (20°C)
 Hot bending strength 90-100 MPa (1400°C)
 Thermal expansion @1500°C 4.70 10 -6 /°C
Thermal conductivity @1200°C 23 W/m•K
 Elastic modulus 240 GPa
 Thermal shock resistance  Extremely good


Physical properties of Sintered Silicon Carbide

Property Typical Value
 Chemical Composition SiC>95%, Si<5%
Bulk Density >3.07 g/cm³
Apparent porosity <0.1%
Modulus of rupture at 20℃ 270 MPa
Modulus of rupture at 1200℃ 290 MPa
Hardness at 20℃ 2400 Kg/mm²
Fracture toughness at 20% 3.3 MPa · m1/2
Thermal Conductivity at 1200℃ 45 w/m .K
Thermal expansion at 20-1200℃ 4.5 1 ×10 -6 /℃
Max.working temperature 1400℃
Thermal shock resistance at 1200℃ Good


Basic physical properties of CVD SiC films

Property Typical Value
Crystal Structure  FCC β phase polycrystalline, mainly (111) oriented
Density  3.21 g/cm³
Hardness 2500  (500g load)
Grain Size  2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg -1 ·K -1
Sublimation Temperature  2700℃
 Flexural Strength  415 MPa RT 4-point
Young's Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1 ·K -1
Thermal Expansion(CTE) 4.5×10 -6 K -1


Main features

The surface is dense and free of pores.

High purity, total impurity content <20ppm, good airtightness.

High temperature resistance, strength increases with increasing usage temperature, reaching the highest value at 2750℃,sublimation at 3600℃.

Low elastic modulus, high thermal conductivity, low thermal expansion coefficient, and excellent thermal shock resistance.

Good chemical stability, resistant to acid, alkali, salt, and organic reagents, and has no effect on molten metals, slag, and other corrosive media. It does not oxidize significantly in the atmosphere below 400 C, and the oxidation rate significantly increases at 800 ℃.

Without releasing any gas at high temperatures, it can maintain a vacuum of10-7mmHg at around 1800°C.

Product application

Melting crucible for evaporation in semiconductor industry.

High power electronic tube gate.

Brush that contacts the voltage regulator.

Graphite monochromator for X-ray and neutron.

Various shapes of graphite substrates and atomic absorption tube coating.

Pyrolytic carbon coating effect under a 500X microscope, with intact and sealed surface.

TaC coating is the new generation high temperature resistant material, with better high temperature stability than SiC. As a corrosion-resistant coating, anti-oxidation coating and wear-resistant coating, can be used in the environment above 2000C, widely used in aerospace ultra-high temperature hot end parts, the third generation semiconductor single crystal growth fields.

Innovative tantalum carbide coating technology_ Enhanced material hardness and high temperature resistance
Antiwear tantalum carbide coating_ Protects equipment from wear and corrosion Featured Image
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Physical properties of TaC coating
Density 14.3 (g/cm3)
Specific emissivity 0.3
Thermal expansion coefficient 6.3 10/K
Hardness (HK) 2000 HK
Resistance 1x10-5 Ohm*cm
Thermal stability <2500℃
Graphite size changes -10~-20um
Coating thickness ≥220um typical value (35um±10um)


Solid CVD SILICON CARBIDE parts are recognized as the primary choice for RTP/EPI rings and bases and plasma etch cavity parts that operate at high system required operating temperatures (>  1500°C), the requirements for purity are particularly high (>  99.9995%) and the performance is especially good when the resistance tol chemicals is particularly high.  These materials do not contain secondary phases at the grain edge, so theil components produce fewer particles than other materials.  In addition, these components can be cleaned usingl hot HF/HCI with little degradation, resulting in fewer particles and a longer service life.

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