CVD Coating

CVD SiC Coating

Silicon carbide(SiC) epitaxy

The epitaxial tray, which holds the SiC substrate for growing the SiC epitaxial slice, placed in the reaction chamber and directly contacts the wafer.

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The upper half-moon part is a carrier for other accessories of the reaction chamber of Sic epitaxy equipment,while the lower half-moon part is connected to the quartz tube, introducing the gas to drive the susceptor base to rotate. they are  temperature-controllable and installed in the reaction chamber without direct contact with the wafer.


Si epitaxy


The tray, which holds the Si substrate for growing the Si epitaxial slice, placed in the reaction chamber and directly contacts the wafer.


The preheating ring is located on the outer ring of the Si epitaxial substrate tray and is used for calibration and heating. It is placed in the reaction chamber and does not directly contact the wafer.


An epitaxial susceptor, which holds the Si substrate for growing an Si epitaxial slice, placed in the reaction chamber and directly contacts the wafer.

Barrel Susceptor for Liquid Phase Epitaxy(1)

Epitaxial barrel is key components used in various semiconductor manufacturing processes, generally used in MOCVD equipment, with excellent thermal stability, chemical resistance and wear resistance, very suitable for use in high temperature processes. It contacts the wafers.



Physical properties of Recrystallized Silicon Carbide

性质 / Property 典型数值 / Typical Value
使用温度 / Working temperature (°C) 1600°C (with oxygen), 1700°C (reducing environment)
SiC 含量 / SiC content > 99.96%
自由 Si 含量 / Free Si content <0.1%
体积密度 / Bulk density 2.60-2.70 g/cm 3
气孔率 / Apparent porosity < 16%
抗压强度 / Compression strength > 600 MPa
常温抗弯强度 / Cold bending strength 80-90 MPa (20°C)
高温抗弯强度 Hot bending strength 90-100 MPa (1400°C)
热膨胀系数 / Thermal expansion @1500°C 4.70 10 -6 /°C
导热系数 / Thermal conductivity @1200°C 23 W/m•K
杨氏模量 / Elastic modulus 240 GPa
抗热震性 / Thermal shock resistance  Extremely good


Physical properties of Sintered Silicon Carbide

性质 / Property 典型数值 / Typical Value
化学成分 / Chemical Composition SiC>95%, Si<5%
体积密度 / Bulk Density >3.07 g/cm³
显气孔率 / Apparent porosity <0.1%
常温抗弯强度 / Modulus of rupture at 20℃ 270 MPa
高温抗弯强度 / Modulus of rupture at 1200℃ 290 MPa
硬度 / Hardness at 20℃ 2400 Kg/mm²
断裂韧性 / Fracture toughness at 20% 3.3 MPa · m1/2
导热系数 / Thermal Conductivity at 1200℃ 45 w/m .K
热膨胀系数 / Thermal expansion at 20-1200℃ 4.5 1 ×10 -6 /℃
最高工作温度 / Max.working temperature 1400℃
热震稳定性 / Thermal shock resistance at 1200℃ Good

CVD SiC 薄膜基本物理性能

Basic physical properties of CVD SiC films

性质 / Property 典型数值 / Typical Value
晶体结构 / Crystal Structure  FCC β phase polycrystalline, mainly (111) oriented
密度 / Density  3.21 g/cm³
硬度 / Hardness 2500  维氏硬度(500g load)
晶粒大小 / Grain SiZe  2~10μm
纯度 / Chemical Purity 99.99995%
热容 / Heat Capacity 640 J·kg -1 ·K -1
升华温度 / Sublimation Temperature  2700℃
抗弯强度 / Flexural Strength  415 MPa RT 4-point
杨氏模量 / Young' s Modulus 430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity 300W·m-1 ·K -1
热膨胀系数 / Thermal Expansion(CTE) 4.5×10 -6 K -1

Pyrolytic Carbon Coating

Main features

The surface is dense and free of pores.

High purity, total impurity content <20ppm, good airtightness.

High temperature resistance, strength increases with increasing usage temperature, reaching the highest value at 2750℃,sublimation at 3600℃.

Low elastic modulus, high thermal conductivity, low thermal expansion coefficient, and excellent thermal shock resistance.

Good chemical stability, resistant to acid, alkali, salt, and organic reagents, and has no effect on molten metals, slag, and other corrosive media. It does not oxidize significantly in the atmosphere below 400 C, and the oxidation rate significantly increases at 800 ℃.

Without releasing any gas at high temperatures, it can maintain a vacuum of10-7mmHg at around 1800°C.

Product application

Melting crucible for evaporation in semiconductor industry.

High power electronic tube gate.

Brush that contacts the voltage regulator.

Graphite monochromator for X-ray and neutron.

Various shapes of graphite substrates and atomic absorption tube coating.

Pyrolytic carbon coating effect under a 500X microscope, with intact and sealed surface.

CVD Tantalum Carbide Coating

TaC coating is the new generation high temperature resistant material, with better high temperature stability than SiC. As a corrosion-resistant coating, anti-oxidation coating and wear-resistant coating, can be used in the environment above 2000C, widely used in aerospace ultra-high temperature hot end parts, the third generation semiconductor single crystal growth fields.

Innovative tantalum carbide coating technology_ Enhanced material hardness and high temperature resistance
Antiwear tantalum carbide coating_ Protects equipment from wear and corrosion Featured Image
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碳化钽涂层物理特性物理特性 Physical properties of TaC coating
密度/ Density 14.3 (g/cm3)
比辐射率 /Specific emissivity 0.3
热膨胀系数/ Thermal expansion coefficient 6.3 10/K
努氏硬度 /Hardness (HK) 2000 HK
电阻/ Resistance 1x10-5 Ohm*cm
热稳定性 /Thermal stability <2500℃
石墨尺寸变化/Graphite size changes -10~-20um
涂层厚度/Coating thickness ≥220um typical value (35um±10um)

Solid Silicon Carbide(CVD SiC)

Solid CVD SILICON CARBIDE parts are recognized as the primary choice for RTP/EPI rings and bases and plasma etch cavity parts that operate at high system required operating temperatures (>  1500°C), the requirements for purity are particularly high (>  99.9995%) and the performance is especially good when the resistance tol chemicals is particularly high.  These materials do not contain secondary phases at the grain edge, so theil components produce fewer particles than other materials.  In addition, these components can be cleaned usingl hot HF/HCI with little degradation, resulting in fewer particles and a longer service life.

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