SiC Crystal Growth Raw Material
Overview
Semicera provides high-purity SiC crystal growth raw materials specially developed for PVT (Physical Vapor Transport) silicon carbide single-crystal growth. Our product portfolio covers 6N SiC powder and high-purity CVD SiC blocks & granules, with strictly controlled trace metal impurities, stable particle morphology, ideal for SiC boule growth in semiconductor wafer substrate production, R&D institutes, and crystal growth labs.
Product Range
1. 6N Silicon Carbide Powder For PVT SiC Growth
6N high purity SiC powder (99.9999%) as the vapor source inside PVT crystal growth crucible. Under high temperature, the powder sublimates into Si-C vapor phase and recrystallizes on SiC seed crystal to form SiC boule.
- Purity: 6N (99.9999%)
- Strict control of trace metal impurities (Al, B, Fe, Ti, Ni, V etc.)
- Customizable particle size distribution
- Good thermal stability, consistent sublimation performance
- Application: Raw feedstock for PVT SiC single crystal growth for SiC wafer substrate
2. High-Purity CVD SiC Blocks And Granules For Semiconductors
CVD-SiC blocks and granules manufactured via chemical vapor deposition. Ultra high purity, dense structure, minimal impurity content.
- Ultra-low heavy metal impurities
- High density, excellent thermal & chemical stability
- Resist high temperature & corrosive vapor environment inside PVT furnace
- Application: PVT source material, high-temperature thermal field components, seed crystal holders, semiconductor high-temperature carriers
Key Advantages
✅ Ultra-high purity up to 6N grade, tightly limited trace dopant impurities, avoid crystal defects
✅ Stable sublimation characteristic, reduce boule defect density during long crystal growth runs
✅ Customizable particle size & shape according to customer crucible & furnace design
✅ Strict batch-to-batch consistency, stable supply for mass production & lab research
✅ Full material inspection report available: ICP-MS impurity analysis, PSD particle size test
Typical Applications
- SiC single crystal boule production for 4/6/8-inch SiC wafer substrates
- PVT crystal growth laboratories & university research projects
- Semiconductor power device substrate manufacturing
- High-temperature thermal field & carrier components for SiC epitaxy & crystal growth furnaces
FAQ
Q1: What is PVT SiC growth raw material used for?
A: It is the feedstock inside the PVT crucible. At high temperature, SiC source sublimate to Si and C vapor, then recrystallize on seed crystal to grow large SiC single crystal ingot, which will be sliced into SiC wafers.
Q2: What is the difference between 6N SiC powder and CVD SiC granules?
A: 6N SiC powder is the main sublimation feedstock for PVT growth. CVD SiC blocks/granules feature CVD deposition structure, applied for high-purity thermal field parts or auxiliary source material, with better high-temperature corrosion resistance.
Q3: Can you provide impurity test certificates (ICP-MS)?
A: Yes, each batch comes with ICP-MS trace metal impurity report, particle size distribution certificate. Custom impurity specification acceptable.
Q4: Can we customize particle size?
A: Yes, we can tailor particle size range based on your PVT furnace and crucible requirements.
Call to Action
Contact our engineering team for datasheet, sample quotation and customized specification.
