AlN Wafer

Aluminum Nitride (AlN) Wafer

Semicera's aluminum nitride (AlN)  wafers are grown using the Physical Vapor Transport (PVT) method in-house; these wafers feature an ultra-wide bandgap (~6.2 eV), exceptional thermal conductivity, outstanding electrical insulation properties, and superior lattice quality, making them the core substrate material for next-generation high-power RF devices, high-voltage power electronic devices, and deep-ultraviolet optoelectronic devices. As a leading Chinese enterprise specializing in the research, development, production, and sales of ultra-wide bandgap AlN monocrystalline substrates, headquartered in Ningbo, Zhejiang Province, Semicera focuses on achieving breakthroughs in AlN monocrystalline core technologies, providing critical core material support for China's fourth-generation semiconductor high-end devices, the energy revolution, and national defense security.

Core Performance Advantages

Material characteristics

Si

GaAs

InP

SiC

GaN

Diamond

GaO

AlN

Band gap(eV)

1.12

1.4

1.3

3.2

3.4

5.5

4.8

6.2

Dielectric constant

11.7

13.1

12.5

9.7

9.8

5.7

10

8.7

Breakdown electric field strength (MV/cm)

0.3

0.4

0.5

2.2

3.3

6

8

12

Saturation velocity (10cm/s)

1

2

1

2

2.5

2.7

2

2

Thermal conductivity (W/cm·K)

1.5

0.5

0.7

4.5

2-3

22

0.1-0.3

3.2

Electron mobility (cm²/V·s)

1350

8500

5400

900

1000

2000

300

500

The outstanding advantages of AlN: it boasts the highest bandgap and highest breakdown electric field strength among all material systems, along with exceptional thermal conductivity (~320 W/m·K significantly exceeding that of high-quality ceramics (<250 W/m·K)), extremely high electrical insulation resistance (>10¹³ Ω·cm), and excellent lattice/thermal expansion compatibility with GaN making it an ideal substrate material for high-power, high-frequency RF and high-voltage power devices, as well as deep-ultraviolet optoelectronic applications.

Product Specifications Overview

Semicera offers a range of single-crystal AlN substrate wafers in three standard size series: 10×10 mm, 1-inch, and 2-inch. Each series is available in three quality grades P-grade (Product Grade), R-grade (Research Grade), and D-grade (Experimental Grade) to meet diverse requirements spanning from scientific research validation to industrial mass production. For detailed specification parameters for each size (e.g., surface roughness, HR-XRD half-height width, total thickness variation, curvature, etc.), please refer to the corresponding sub-size product specification page.

Dimension series

Diameter/Side Length

thickness

crystal orientation

quality grade

applicable scene

10×10mm

10mm ± 0.5mm

450μm ± 25μm

0001)± 0.5°

P/R/D Grade

Small-scale research prototypes and device process verification

1 inch

25.4 mm ± 0.5 mm (or 24 mm ± 1 mm)

450μm ± 25μm

0001)± 0.5°

P/R/D Grade

Laboratory R&D and small-batch device prototyping

2 inches

50.8 mm ± 0.5 mm (or 50 mm ± 1 mm)

450μm ± 25μm

0001)± 0.5°

P/R/D Grade

Industrial mass production and large-scale device manufacturing

Core Application Domains

Why choose Semicera?

Customization, Quality Control, and Technical Consulting

In addition to standard-sized products, Semicera offers end-to-end customized services tailored to customers' specific device manufacturing requirements, supported by a rigorous quality control system and professional technical consulting support, enabling customers to efficiently complete material selection and process validation.

 Contact us

For detailed product specifications for various sizes, sample requests, or bulk procurement quotations, please contact Semicera's Sales and Technical Team.