With the rapid development of third-generation semiconductors, thermal field materials are facing increasingly stringent requirements: ultra-high purity, extreme temperature stability, and superior corrosion resistance.
At Semicera, we focus on building advanced, controllable CVD root technologies, translating them into reliable products with verified performance data across crystal growth, epitaxy, and device manufacturing processes.
Core CVD Root Technologies
- CVD-SiC and CVD-TaC controllable deposition technologies
- AI-enabled process optimization for coating uniformity and reproducibility
- Precise control of:
- Coating thickness and density
- Microstructure and grain morphology
- Interfacial bonding and thermal stress
These root technologies form the foundation of Semicera’s diversified product portfolio.
Long-Lifetime CVD-SiC Coated Graphite Components
To meet the durability requirements of high-temperature thermal fields, Semicera has developed long-lifetime SiC-coated graphite trays and susceptors.
Key Technical Approaches
- Accurate CTE matching between graphite substrate and SiC coating
- Gradient transition layer design to reduce interfacial stress
- Precise microstructure tuning of the SiC coating
Performance Highlights
- Significantly improved coating adhesion
- Reduced cracking and delamination under thermal cycling
- Extended service lifetime in SiC crystal growth environments
High-Temperature CVD-TaC Coatings (>2000 °C)
TaC coatings offer superior high-temperature and corrosion resistance compared with conventional SiC coatings.
Technical Breakthrough
- Avoids traditional Ta/C co-deposition routes
- Utilizes in-situ solid–gas reaction between tantalum source and graphite
- Enables:
- Faster deposition rates
- Improved thickness uniformity
- Better coating controllability
Verified Performance
- Stable operation above 2000 °C in strong corrosive environments
- Applied in 8-inch SiC crystal growth
- Crystal surface shows:
- No reaction with TaC
- Bright and clean crystal edges
- Compared with alternative products:
- No crystal adhesion to coating
- No columnar crystal defects at the edges
Process Benefits
- Reduced micropipes, corrosion pits, and carbon inclusions
- Suppressed carbon contamination
- Improved stoichiometry and electrical performance of SiC epitaxial wafers
Solid SiC Components (Focus Rings & Edge Rings)
Semicera provides Solid-SiC focus rings and edge rings for ICP etching and thermal field optimization.
Etching Uniformity
- Validated on 6-inch, 8-inch, and 12-inch wafers
- Demonstrated clear improvement in etching uniformity compared with original components
- Verified on multiple customer platforms
Reliability
- Continuous operation exceeding 105 hours on ICP etching tools
- Stable performance with no abnormal degradation
Solid SiC Edge Rings: Thermal Field Optimization
Adding Solid-SiC edge rings significantly improves temperature control:
Temperature Uniformity Improvement
- Maximum temperature difference reduced from:Improvement becomes more pronounced at higher temperaturesImprovement becomes more pronounced at higher temperatures
- ~16.7 °C → ~8–9 °C at high heating rates
- Improvement becomes more pronounced at higher temperatures
Annealing Uniformity (49-point measurement)
- With SiC edge ring: 5.05%
- Without edge ring: 8.27%
This demonstrates clear benefits in temperature stability and process consistency.
Porous TaC Materials
- Controllable porosity and pore size distribution
- Designed for specialized high-temperature and mass-transport-sensitive applications
- Meets strict performance specifications for porous TaC structures
High-Thermal-Conductivity 3C-SiC Polycrystalline Wafers
Thermal dissipation is a core bottleneck for high-power and high-frequency chips.
Material Advantages
- Theoretical thermal conductivity up to 552 W/(m·K)
- Significantly higher than:
- Si₃N₄: ~80–120 W/(m·K)
- AlN: ~160–230 W/(m·K)
Characterization & Data
- Surface and cross-section SEM verification
- TDTR thermal conductivity testing
- Controlled impurity levels:
- B, N, O within strict specifications
Application Potential
- High-power modules
- 5G RF devices
- Advanced thermal management substrates
CVD-SiC Granular Feedstock for Crystal Growth
Based on ultra-high-purity Solid-SiC rapid deposition technology, Semicera produces high-quality CVD-SiC granular feedstock.
Validation & Applications
- Passed process compatibility verification by leading customers
- Enables substitution for semi-insulating transparent 4H-SiC crystal growth
- Transparent 4H-SiC shows strong potential in:
- Optical waveguides
- Smart glasses and AR-related applications
Conclusion
By combining root-level CVD technologies, quantified performance data, and application-driven product design, Semicera continues to strengthen its position as a reliable materials and coating partner for the semiconductor industry.
We are committed to delivering:
- Data-verified performance
- Scalable manufacturing solutions
- Long-term reliability for next-generation semiconductor processes