CVD SiC Coating
Introduction to Silicon Carbide Coating
Our Chemical Vapor Deposition (CVD) Silicon Carbide (SiC) coating is a highly durable and wear-resistant layer, ideal for environments demanding high corrosion and thermal resistance. This coating is applied in thin layers on various substrates through the CVD process, offering superior performance characteristics.
Key Features
- Exceptional Purity: Boasting an ultra-pure composition of 99.99995%, our SiC coating minimizes contamination risks in sensitive semiconductor operations.
- Superior Resistance: Exhibits excellent resistance to both wear and corrosion, making it perfect for challenging chemical and plasma settings.
- High Thermal Conductivity: Ensures reliable performance under extreme temperatures due to its outstanding thermal properties.
- Dimensional Stability: Maintains structural integrity across a wide range of temperatures, thanks to its low thermal expansion coefficient.
- Enhanced Hardness: With a hardness rating of 40 GPa, our SiC coating withstands significant impact and abrasion.
- Smooth Surface Finish: Provides a mirror-like finish, reducing particle generation and enhancing operational efficiency.
Applications
Semicera SiC coatings are utilized in various stages of semiconductor manufacturing, including:
- LED Chip Fabrication
- Polysilicon Production
- Semiconductor Crystal Growth
- Silicon and SiC Epitaxy
- Thermal Oxidation and Diffusion (TO&D)
We supply SiC-coated components crafted from high-strength isostatic graphite, carbon fiber-reinforced carbon and 4N recrystallized silicon carbide, tailored for fluidized-bed reactors, STC-TCS converters, CZ unit reflectors, SiC wafer boat, SiCwafer paddle, SiC wafer tube, and wafer carriers used in PECVD, silicon epitaxy, MOCVD processes.
Benefits
- Extended Lifespan: Significantly reduces equipment downtime and maintenance costs, enhancing overall production efficiency.
- Improved Quality: Achieves high-purity surfaces necessary for semiconductor processing, thus boosting product quality.
- Increased Efficiency: Optimizes thermal and CVD processes, resulting in shorter cycle times and higher yields.
Technical Specifications
- Structure: FCC β phase polycrystaline, mainly (111)oriented
- Density: 3.21 g/cm³
- Hardness: 2500 Vickes hardness (500g load)
- Fracture Toughness: 3.0 MPa·m1/2
- Thermal Expansion Coefficient (100–600 °C): 4.3 x 10-6k-1
- Elastic Modulus(1300℃): 435 GPa
- Typical Film Thickness: 100 µm
- Surface Roughness: 2-10 µm
Purity Data (Measured by Glow Discharge Mass Spectroscopy)
|
Element |
ppm |
Element |
ppm |
|
Li |
< 0.001 |
Cu |
< 0.01 |
|
Be |
< 0.001 |
Zn |
< 0.05 |
|
Al |
< 0.04 |
Ga |
< 0.01 |
|
P |
< 0.01 |
Ge |
< 0.05 |
|
S |
< 0.04 |
As |
< 0.005 |
|
K |
< 0.05 |
In |
< 0.01 |
|
Ca |
< 0.05 |
Sn |
< 0.01 |
|
Ti |
< 0.005 |
Sb |
< 0.01 |
|
V |
< 0.001 |
W |
< 0.05 |
|
Cr |
< 0.05 |
Te |
< 0.01 |
|
Mn |
< 0.005 |
Pb |
< 0.01 |
|
Fe |
< 0.05 |
Bi |
< 0.05 |
|
Ni |
< 0.01 |
|
By utilizing cutting-edge CVD technology, we offer tailored SiC coating solutions to meet the dynamic needs of our clients and support advancements in semiconductor manufacturing.
