1-inch AlN Single-Crystal Wafer

Short Description:

1-inch AlN single-crystal wafers with P, R and D grades, (0001) orientation, Al-face CMP, ≥90% usable area and controlled TTV and bow.

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Product Detail

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Product overview

A one-inch aluminum nitride wafer platform for epitaxy and wide-bandgap research, offered in three grade levels to match different crystal-quality and development needs.

Key features

· P and R grades at 25.4 ± 0.5 mm diameter
· D grade at 24 ± 1 mm diameter
· Al-face CMP with Ra ≤0.5 nm
· Usable area ≥90%
· Controlled TTV, bow and primary flat orientation

Typical applications

· AlN and Al-rich nitride epitaxy
· Deep-UV LED and detector research
· High-frequency and high-voltage material development
· Thermal and dielectric substrate evaluation
· Pilot process qualification

Technical specification

Property	P Product	R Research	D Experimental
Diameter	25.4 ± 0.5 mm	25.4 ± 0.5 mm	24 ± 1 mm
Thickness	450 ± 25 µm	450 ± 25 µm	450 ± 25 µm
Orientation	(0001) ± 0.5°	(0001) ± 0.5°	(0001) ± 0.5°
HR-XRD FWHM (002)	≤100 arcsec	≤200 arcsec	≤300 arcsec
HR-XRD FWHM (102)	≤80 arcsec	≤150 arcsec	≤250 arcsec
Surface	Al face CMP; N face MP	Al face CMP; N face MP	Al face CMP; N face MP
Surface roughness	Al ≤0.5 nm; N ≤1.2 µm	Al ≤0.5 nm; N ≤1.2 µm	Al ≤0.5 nm; N ≤1.2 µm
Usable area	≥90%	≥90%	≥90%
Visible scratches / chips	None	None	None
Edge exclusion	1 mm	1 mm	1 mm
TTV	≤20 µm	≤20 µm	≤20 µm
Bow	≤20 µm	≤20 µm	≤20 µm
Primary flat	(10-10) ±5°; 8 ±1 mm	(10-10) ±5°; 8 ±1 mm	(10-10) ±5°; 8 ±1 mm
Packaging	Single-wafer box	Single-wafer box	Single-wafer box
Specification note: Values are reproduced from the supplied product specification. Final acceptance criteria, test methods and sampling plan must be confirmed in the quotation or purchase specification.