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AMAT 12 inch Insert Ring

AMAT 12 inch Insert Ring Featured Image
  • AMAT 12 inch Insert Ring

Short Description:

The AMAT 12″ Insert Ring 0200-01797 is a high-performance semiconductor chamber component designed for 300 mm (12-inch) wafer processing systems. As a critical part of plasma processing equipment, this insert ring plays a key role in plasma control, edge uniformity optimization, and chamber protection. The 0200-01797 Insert Ring is designed to meet the stringent requirements of modern semiconductor fabrication, supporting stable process performance and improved wafer yield. We welcome your inquiries.


Product Detail

Product Tags

The AMAT 12" Insert Ring is installed around the wafer processing region inside plasma chambers, typically in etch and PVD systems. It is designed specifically for 300 mm wafer platforms, where precise plasma control is essential for advanced semiconductor manufacturing.

 

Key Product Information

Item

Description

Product Name

Insert Ring

Part Number

0200-01797

Wafer Size

300 mm (12 inch)

Component Type

Plasma Control Ring / Insert Ring

Application

Etch / PVD / Plasma Processing

Installation Position

Wafer Edge / ESC Periphery

Supplier

Semicera Semiconductor

 

Material Characteristics

 

The AMAT 12" INSERT RING 0200-01797 is typically manufactured using advanced semiconductor-grade materials, selected based on process requirements and performance targets.

Common Material Options

Silicon (Si)

Widely used in etch environments due to its compatibility with silicon wafers. It minimizes contamination and provides excellent resistance to plasma erosion.

High-Purity Quartz (SiO₂)

Used in applications requiring electrical insulation and ultra-low contamination. Quartz offers strong chemical stability and plasma resistance.

Advanced Ceramics (e.g., Al₂O₃, Y₂O₃-coated materials)

Provide enhanced durability, superior corrosion resistance, and extended lifetime in aggressive plasma conditions.

 

Key Material Advantages

 

Low Contamination Risk

Semiconductor-grade materials ensure minimal impurity introduction, supporting high-yield wafer production.

Excellent Plasma Resistance

Materials are selected to withstand ion bombardment, reactive gases, and high-energy plasma exposure.

Thermal Stability

Maintains structural integrity under high temperatures and thermal cycling.

Electrical Performance

Supports stable RF fields and plasma conditions through insulating or controlled conductive properties.

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