The SiC coated support tray PE2061S is a critical structural component specifically designed for silicon epitaxy systems such as LPE and MOCVD equipment. It works in conjunction with a barrel-shaped susceptor to provide stable support and precise alignment for wafers or substrates during the epitaxial growth process. As a key element within the thermal zone of barrel-type reactors, the tray not only offers mechanical support but also plays a vital role in maintaining uniform thermal distribution, controlled gas flow, and overall process stability.
Compared to conventional planar epitaxy systems, barrel-type MOCVD reactors feature larger reaction chambers and higher wafer loading capacity, enabling significantly improved production efficiency. However, this also introduces greater technical challenges: the internal components must withstand prolonged operation under high temperatures, hydrogen-rich environments, and halide-based precursor chemistries—all while maintaining exceptional uniformity and minimizing contamination. The PE2061S support tray was developed specifically to meet these stringent demands.
The core structure is made of high-purity graphite, chosen for its excellent thermal conductivity and shock resistance, ensuring dimensional stability during aggressive thermal cycling. The surface is coated with a dense and uniform silicon carbide (SiC) layer using advanced CVD technology. This coating dramatically improves corrosion resistance, oxidation stability, and wear performance, while effectively suppressing particle generation and contamination—key requirements in semiconductor epitaxy processes.
Structurally, the support tray features an array of circular through-holes, not just for weight reduction, but more importantly to facilitate gas exhaust and flow optimization within the reactor chamber. These openings help efficiently remove reaction byproducts, minimize stagnant zones, and promote uniform distribution of process gases. This leads to improved deposition uniformity, better layer thickness control, and enhanced crystalline quality of the epitaxial films.
The PE2061S SiC coated tray is suitable for a wide range of high-temperature processing platforms. While it is optimized for silicon epitaxy, it also performs reliably in compound semiconductor growth (such as GaN and SiC) and other advanced material applications. Its ability to maintain mechanical integrity, dimensional precision, and thermal uniformity under extreme conditions makes it a foundational element in high-yield, high-throughput epitaxy systems.
Leveraging Semicera’s years of experience in engineered CVD coating processes, we have continuously optimized critical parameters such as coating uniformity, interfacial bonding, and stress control. As a result, our SiC-coated support trays are widely recognized by customers for their extended lifespan—often outperforming OEM parts under certain conditions. In addition, Semicera offers customized design and process tuning services, tailored to different equipment models, thermal field structures, gas chemistries, and cleaning protocols. Backed by economies of scale and production efficiency, we also provide cost-effective solutions that help customers reduce total ownership costs without compromising performance.
