The advantages of ASM (Advanced Semiconductor Materials) in the field of Epitaxy Tools are mainly concentrated in the following aspects:
1. Leading technology and mature equipment
ASM is particularly renowned for its Aixtron and Epsilon series of epitaxial machines, and has mature products in the field of epitaxial growth for multiple material systems such as monocrystalline silicon, SiC (silicon carbide), and GaN (gallium nitride). In particular
Epsilon series (single-chip furnace) : Widely used in silicon epitaxy (Si EPI), it is renowned for its precise thickness control, uniformity, and low defect density.
The Aixtron series (MOCVD) : Focusing on the epitaxy of compound semiconductors (such as GaN, SiC EPI), it is suitable for industries like power devices, leds, and lasers.
2. Excellent inter-piece uniformity and thickness control
The epitaxial devices of ASM generally have:
Excellent uniformity: The intra-chip uniformity (WIW) and inter-chip uniformity (WIF) are controlled within a narrow error range, facilitating subsequent process control.
Outstanding thickness and doping accuracy: Leading in the industry in terms of thickness control (such as 1-10μm thick EPI layers) and doping consistency (Boron, Phosphorus, Arsenic).
3. High capacity and low Cost of Ownership (COO)
ASM's multi-chip Vertical furnaces (such as vertical furnaces) are particularly suitable for large-scale mass production, capable of processing 50 to 200 wafers in a single batch, and are applicable to cost-sensitive production lines.
The single-chip Epsilon series is suitable for small-batch production of high-precision products, with flexible conversion and easy maintenance.
4. Rapid expansion of SiC epitaxy
ASM is actively expanding the SiC epitaxial market:
Acquired LPE S.p.A, enhancing the technical reserve of SiC epitaxial equipment;
ASM's SiC EPI devices support high growth rates (>30 μm/hr), low defect (BPD, TSD) control, and are specifically optimized for the requirements of power devices such as MOSFETs and Schottky diodes.
