In terms of structural design, Semicera's SiC Coated Top for PE2061S epitaxy equipment is specifically optimized for the process characteristics. The precision fit between the top plate and the barrel base ensures a stable mechanical alignment even under high-temperature cycles, preventing warping or displacement caused by uneven thermal stress. This stable structural design helps maintain consistent wafer positioning during the epitaxial growth process, improving the uniformity of layer thickness and doping distribution.
In manufacturing, Semicera leverages its mature CVD SiC coating technology to apply a dense, low-defect silicon carbide protective layer on the graphite substrate. By precisely controlling deposition temperature, gas composition, and growth rate, the coating thickness is highly consistent, and potential failure risks such as microcracks and pinholes are minimized. Additionally, an optimized buffer layer structure is introduced to effectively mitigate the thermal expansion mismatch between the graphite and SiC, enhancing the adhesion and reliability of the coating under long-term high-temperature conditions.
From an application value perspective, the SiC-coated top plate for PE2061S significantly enhances the operational stability and maintenance cycle of the equipment. Its excellent corrosion resistance effectively shields against the reaction gases and byproducts commonly encountered during the epitaxial process, reducing particle generation and contamination risks, thus improving wafer yield. Furthermore, its extended service life leads to reduced downtime for maintenance and more predictable consumable costs, providing customers with higher overall production line efficiency.
