The SiC focus ring is a critical functional component used in advanced plasma etching and thin-film deposition equipment. Installed around the electrostatic chuck (ESC), it is designed to regulate the electric field and plasma distribution at the wafer edge, effectively suppressing edge effects and improving overall process uniformity and wafer yield.
Manufactured from high-density silicon carbide ceramics or SiC-coated materials, this focus ring offers exceptional resistance to plasma erosion, excellent thermal stability, and high mechanical strength. It maintains long-term dimensional stability under high-power, high-temperature, and highly corrosive process environments, including fluorine- and chlorine-based chemistries. Compared with conventional quartz or graphite focus rings, SiC focus rings demonstrate significantly longer service life, lower particle generation, and improved process stability, helping to reduce chamber maintenance frequency and total cost of ownership.
Key Features
- Outstanding plasma resistance for high-power and long-duration processes
- High thermal conductivity and thermal stability, minimizing thermal stress and deformation
- Low particle generation due to dense microstructure and high surface quality
- High-purity material system with low metallic impurity levels, suitable for advanced processes
- Excellent dimensional consistency ensured by precision machining
Typical Applications
- ICP / CCP plasma etching equipment
- High-selectivity and deep silicon etching (DRIE) processes
- Logic devices, memory, and power semiconductor manufacturing
Customization & Services
Material selection, structural design, and dimensional customization are available based on different equipment platforms and process requirements. Compatible with mainstream international equipment models, with support for build-to-print and sample-based manufacturing.
