GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrates

Short Description:

Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables. We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing, photovoltaic industry and other related fields.

Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.

At present,we are the only manufacturer to provide purity 99.9999% SiC coating and 99.9% recrystallized silicon carbide. The max SiC coating length we can do 2640mm.

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GaAs substrates are divided into conductive and semi-insulating, which are widely used in laser (LD), semiconductor light-emitting diode (LED), near-infrared laser, quantum well high-power laser and high-efficiency solar panels. HEMT and HBT chips for radar, microwave, millimeter wave or ultra-high speed computers and optical communications; Radio frequency devices for wireless communication, 4G, 5G, satellite communication, WLAN.

Recently, gallium arsenide substrates have also made great progress in mini-LED, Micro-LED, and red LED, and are widely used in AR/VR wearable devices.

Diameter 晶片直径	50mm \| 75mm \| 100mm \| 150mm
Growth Method 生长方式	LEC 液封直拉法 VGF 垂直梯度凝固法
Wafer Thickness 厚度	350 um ~ 625 um
Orientation 晶向	<100> / <111> / <110> or others
Conductive Type 导电类型	P – type / N – type / Semi-insulating
Type/Dopant 掺杂剂	Zn / Si / undoped
Carrier Concentration 载流子浓度	1E17 ~ 5E19 cm-3
Resistivity at RT 室温电阻率(ohm•cm)	≥1E7 for SI
Mobility 迁移率(cm2/V•Sec)	≥4000
EPD( Etch Pit Density ) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Bow / Warp 翘曲度	≤ 20 um
Surface Finish 表面	DSP/SSP
Laser Mark 激光码
Grade 等级	Epi polished grade / mechanical grade