Gallium Nitride Substrates|GaN Wafers

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Gallium nitride (GaN), like silicon carbide (SiC) materials, belongs to the third generation of semiconductor materials with wide band gap width, with large band gap width, high thermal conductivity, high electron saturation migration rate, and high breakdown electric field outstanding characteristics. GaN devices have a wide range of application prospects in high frequency, high speed and high power demand fields such as LED energy-saving lighting, laser projection display, new energy vehicles, smart grid, 5G communication.

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The third generation semiconductor materials mainly include SiC, GaN, diamond, etc., because its band gap width (Eg) is greater than or equal to 2.3 electron volts (eV), also known as wide band gap semiconductor materials. Compared with the first and second generation semiconductor materials, the third generation semiconductor materials have the advantages of high thermal conductivity, high breakdown electric field, high saturated electron migration rate and high bonding energy, which can meet the new requirements of modern electronic technology for high temperature, high power, high pressure, high frequency and radiation resistance and other harsh conditions. It has important application prospects in the fields of national defense, aviation, aerospace, oil exploration, optical storage, etc., and can reduce energy loss by more than 50% in many strategic industries such as broadband communications, solar energy, automobile manufacturing, semiconductor lighting, and smart grid, and can reduce equipment volume by more than 75%, which is of milestone significance for the development of human science and technology.

Item 项目	GaN-FS-C-U-C50	GaN-FS-C-N-C50	GaN-FS-C-SI-C50
Diameter 晶圆直径	50.8 ± 1 mm
Thickness厚度	350 ± 25 μm
Orientation 晶向	C plane (0001) off angle toward M-axis 0.35 ± 0.15°
Prime Flat 主定位边	(1-100) 0 ± 0.5°, 16 ± 1 mm
Secondary Flat 次定位边	(11-20) 0 ± 3°, 8 ± 1 mm
Conductivity 导电性	N-type	N-type	Semi-Insulating
Resistivity (300K) 电阻率	< 0.1 Ω·cm	< 0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 μm
BOW 弯曲度	≤ 20 μm
Ga Face Surface Roughness Ga面粗糙度	< 0.2 nm (polished);
	or < 0.3 nm (polished and surface treatment for epitaxy)
N Face Surface Roughness N面粗糙度	0.5 ~1.5 μm
	option: 1~3 nm (fine ground); < 0.2 nm (polished)
Dislocation Density 位错密度	From 1 x 105 to 3 x 106 cm-2 (calculated by CL)*
Macro Defect Density 缺陷密度	< 2 cm-2
Useable Area 有效面积	> 90% (edge and macro defects exclusion)
Can be customized according to customer requirements, different structure of silicon, sapphire, SiC based GaN epitaxial sheet.