Product Description
4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
Description
|
Property |
4H-SiC, Single Crystal |
6H-SiC, Single Crystal |
|
Lattice Parameters |
a=3.076 Å c=10.053 Å |
a=3.073 Å c=15.117 Å |
|
Stacking Sequence |
ABCB |
ABCACB |
|
Mohs Hardness |
≈9.2 |
≈9.2 |
|
Density |
3.21 g/cm3 |
3.21 g/cm3 |
|
Therm. Expansion Coefficient |
4-5×10-6/K |
4-5×10-6/K |
|
Refraction Index @750nm |
no = 2.61 |
no = 2.60 |
|
Dielectric Constant |
c~9.66 |
c~9.66 |
|
Thermal Conductivity (N-type, 0.02 ohm.cm) |
a~4.2 W/cm·K@298K |
|
|
Thermal Conductivity (Semi-insulating) |
a~4.9 W/cm·K@298K |
a~4.6 W/cm·K@298K |
|
Band-gap |
3.23 eV |
3.02 eV |
|
Break-Down Electrical Field |
3-5×106V/cm |
3-5×106V/cm |
|
Saturation Drift Velocity |
2.0×105m/s |
2.0×105m/s |
